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#1 2008-08-19 9:55 am
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- Adult's Play
- Royal Wombat
- From: Björk, Björk
- Registered: 2001-05-14
- Posts: 24097
IBM Builds World's Smallest SRAM Memory Cell
YORKTOWN HEIGHTS, NY - 18 Aug 2008: IBM (NYSE: IBM) and its joint development partners -- AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE) -- today announced the first working static random access memory (SRAM) for the 22 nanometer (nm) technology node, the world's first reported working cell built at its 300mm research facility in Albany, NY.
SRAM chips are precursors to more complex devices such as microprocessors.
The SRAM cell utilizes a conventional six-transistor design and has an area of 0.1um2, breaking the previous SRAM scaling barriers.
...
22 nm is two generations away in chip manufacturing. The next generation is 32 nm -- where IBM and its partners are in development with their leading 32 nm high-K metal gate technology that no other company or consortium can match.
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